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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3254
DESCRIPTION *Low Collector Saturation Voltage *Good Linearity of hFE *High Switching Speed *Complement to Type 2SA1290
APPLICATIONS *Various inductance lamp drivers for electrical equipment *Inverters, converters *Power amplifier *Switching regulator, dirver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w
ww
VALUE
scs .i
80 V 60 V 5 V 7 A 10 A 35 W
UNIT
.cn mi e
IC ICM
Collector Current-Continuous
Collector Current-Pulse Collector Power Dissipation @ TC=25 Junction Temperature
PC
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 1mA ; RBE= IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 3.5A; IB= 0.175A VCB= 40V; IE= 0 VEB= 4V; IC= 0 MIN 60 80 5
2SC3254
TYP.
MAX
UNIT V V V
0.4 100 100 280 100
V A A
IC= 1A ; VCE= 2V
Switching times ton tstg tf
Turn-on Time Storage Time Fall Time
w w
S 140-280
scs .i w
IC=1A ; VCE= 5V
.cn mi e
70
MHz
0.1 0.5 0.1
s s s
IC= 3A; IB1= -IB2= 0.15A; RL=6.67; VCC= 20V
hFE Classifications Q 70-140 R 100-200
isc Websitewww.iscsemi.cn
2


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